PART |
Description |
Maker |
KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4E641612B-TC K4E661612B-TC K4E641612B-L K4E661612 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM416C4100B |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4F641612C-TC K4F661612C-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4F171612D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 100万16的CMOS动态随机存储器的快速页面模
|
Samsung Semiconductor Co., Ltd.
|
KM416C4000C KM416C4100C KM416C4000CS-5 |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4E641611D-TC50 K4E661611D-TC50 K4E641611D-TC60 K4 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out 4M X 16 EDO DRAM, 50 ns, PDSO50
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
V53C16125H V53C16125HK60 V53C16125HT50 |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM 128K x 16bit high performance fasr page mode CMOS dynamic RAM
|
Mosel Vitelic Corp Mosel Vitelic, Corp Mosel Vitelic Corp
|
KM416V4104CS-45 KM416V4104C KM416V4004C KM416V4004 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM416V4000C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode(4M x 16CMOS动态RAM(带快速页模式)) 4米16位的快速页面模式的CMOS动态RAM4米16位的CMOS动态随机存储器(带快速页模式))
|
Samsung Semiconductor Co., Ltd.
|
K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. 16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|