| PART |
Description |
Maker |
| IRF3205S IRF3205L |
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
|
International Rectifier
|
| IRF3205L IRF3205S IRF3205 |
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
|
IRF[International Rectifier]
|
| HUF75321D3 HUF75321D3S FN4351 |
20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs
From old datasheet system
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036Ω, N沟道UltraFET功率MOS场效应管)
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036惟, N娌??UltraFET???MOS?烘?搴??)
|
Intersil Corporation
FAIRCHILD SEMICONDUCTOR CORP
|
| 2N1794 2N1795 2N1806 2N1807 2N1914 2N1915 2N1916 2 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications
V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications
|
International Rectifier
|
| STB80NF55L-06 STB80NF55L-06T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 80A I(D) | TO-263AB
N - CHANNEL 55V - 0.005 ohm - 80A D2PAK STripFET POWER MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| HUF75333S3S HUF75333G3 HUF75333P3 HUF75333S3 HUF75 |
55V N-Channel UltraFET Power MOSFET
66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDB9403 |
N-Channel Power Trench? MOSFET 40V, 110A, 1.2mΩ
|
Fairchild Semiconductor
|
| IRFIZ48N IRFIZ48 IRFIZ48NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A)
|
IRF[International Rectifier]
|
| IRFZ24N IRFZ24NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)
|
IRF[International Rectifier]
|
| IRFR9024N IRFU9024N IRFRU9024N IRFR9024NTR IRFR902 |
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=-55V Rds(on)=0.175ohm Id=-11A)
P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管) P通道表面贴装HEXFET功率MOSFET的性（P沟道表贴型的HEXFET功率马鞍山场效应管）
|
http://
IRF[International Rectifier]
International Rectifier, Corp.
|
| HUF75332S3S HUF75332G3 HUF75332P3 |
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N沟道,UltraFET功率MOS场效应管)
|
Intersil Corporation
|
