| PART |
Description |
Maker |
| BG3430R |
DUAL N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| BG3230 BG3230R |
RF-MOSFET - Package: SOT363
DUAL N-Channel MOSFET Tetrode 双N沟道MOSFET的四极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BG3123 BG3123R |
RF-MOSFET - Package: SOT363
DUAL N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
| BF2030R BF2030W BF2030 |
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BF1009S |
Silicon N-Channel MOSFET Tetrode for ...
|
Infineon
|
| BF1005S07 |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| Q62702-F1055 BF997 |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BF1005SR BF1005SW BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB
Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BF1009SR BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BF2030W Q62702-F1774 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
