| PART |
Description |
Maker |
| 1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V，最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电3V，最大反向电流降.01μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电12V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电14V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V，最大反向电.8μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V，最大反向电0μA的硅外延平面型齐纳二极管)
PC 5/10-G-7,62
PCV 5/ 4-G-7,62
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V，最大反向电0μA的硅外延平面型齐纳二极管)
From old datasheet system
Silicon Epitaxial Planar Z?Diodes
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Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| 1A7G 1A1G 1A2G 1A3G 1A4G 1A5G 1A6G |
GLASS PASSIVATED JUNCTION SILICON RECTIFIER
GLASS PASSIVATED JUNCTION SILICON RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE
GLASS PASSIVATED JUNCTION SILICON RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE
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RECTRON[Rectron Semiconductor]
PanJit International, Inc.
|
| U5ZA53C |
ZENER DIODE SILICON DIFFUSED-JUNCTION TYPE BEST SUITED FOR OVERVOLTAGE PROTECTION OF ELECTRONIC SYSTEM
Silicon Diffused-Junction Type Zener Diode
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TOSHIBA[Toshiba Semiconductor]
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| 1N4007GPP 1N4006GPP |
GLASS PASSIVATED JUNCTION SILICON RECTIFIER 1.0 AMP, 50 THRU 1000 VOLTS 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
|
Central Semiconductor Corp.
Vishay Intertechnology, Inc.
|
| 2M6.8Z 2M2.Z 2M2.0Z 2M160Z 2M30Z 2M39Z 2M36Z 2M47Z |
2.0 Watts Glass Passivated Junction Silicon Zener Diodes
160 V, 2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-15
|
Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Compan...
Taiwan Semiconductor Co...
|
| 3SMC8.0CA 3SMC8.5CA 3SMC85CA 3SMC6.0CA 3SMC6.5CA 3 |
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(??ぇ???宸ヤ??靛?.0V,????荤???????????靛??????
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电.0V,双向玻璃钝化节点瞬变电压抑制 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE
SURFACE MOUNT BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 3000 WATTS, 5.0 THRU 170 VOLTS 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电9.0V,双向玻璃钝化节点瞬变电压抑制 3000 W, BIDIRECTIONAL, SILICON, TVS DIODE
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电7.0V,双向玻璃钝化节点瞬变电压抑制
Bi-Directional Glass Passivated Junction Transient Voltage Suppressors(最大反向工作电6.5V,双向玻璃钝化节点瞬变电压抑制
SURFACE MOUNT BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 3000 WATTS/ 5.0 THRU 170 VOLTS
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http://
Vishay Intertechnology, Inc.
Central Semiconductor, Corp.
Central Semiconductor Corp.
|
| 2SC4401 |
NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications
NPN Epitaxial Planar Silicon Transistors
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Sanyo
|
| 2SC3950 |
NPN Epitaxial Planar Silicon Transistor High-Definition CRT Display Video Output Applications
PNP/NPN Epitaxial Planar Silicon Transistors
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Sanyo
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