| PART |
Description |
Maker |
| CY7C1515KV18-250BZXI CY7C1515KV18-300BZC CY7C1515K |
72-Mbit QDR II SRAM 4-Word Burst Architecture
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
http://
Cypress Semiconductor, Corp.
|
| CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300 |
72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1314BV18-167BZXC |
18-Mbit QDRII SRAM 2 Word Burst Architecture 512K X 36 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构（2.5周期读写延迟
18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| R1Q2A3609 R1Q2A3636 R1Q2A3618 R1Q2A3609ABG-60R R1Q |
36-Mbit QDR™II SRAM 2-word Burst
36-Mbit QDR™II SRAM 2-word Burst
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| CY7C1525AV18-167BZC CY7C1525AV18-167BZI CY7C1525AV |
72-Mbit QDR-II垄芒 SRAM 2-Word Burst Architecture
72-Mbit QDR-II SRAM 2-Word Burst Architecture
72-Mbit QDR-II?SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1526V18-167BZC CY7C1511V18-167BZC CY7C1513V18- |
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 167 MHz.
72 Mbit QDR-II SRAM 4-word burst architecture. Speed 200 MHz.
|
Cypress
|
| IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT
http://
Integrated Device Technology, Inc.
|
| CY7C1411AV18-200BZI CY7C1411AV18-250BZI CY7C1411AV |
36-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 18 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDRII SRAM 4-Word Burst Architecture 1M X 36 QDR SRAM, 0.45 ns, PBGA165
36-Mbit QDRII SRAM 4-Word Burst Architecture 2M X 18 QDR SRAM, 0.5 ns, PBGA165
36-Mbit QDRII SRAM 4-Word Burst Architecture 4M X 8 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
