| PART |
Description |
Maker |
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位（为512k × 36/1M × 18）流体系结构，通过与NoBLTM的SRAM
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS882Z18AB-250 GS882Z18AB-133 GS882Z18AD-133 GS882 |
250MHz 5.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
133MHz 8.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
166MHz 7ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
200MHz 6.5ns 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
200MHz 6.5s 512K x 18 9Mb pipelined and flow through synchronous NBT SRAM
|
GSI Technology
|
| IS61VF51218A-6.5B3 |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| CY7C1373D-133AXC CY7C1373D ICY7C1373D-100BGXI CY7C |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture
|
CYPRESS[Cypress Semiconductor]
|
| CY7C1383C-117BGC CY7C1383C-100AC CY7C1383C-100BZI |
18-Mb (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 STANDARD SRAM, 8.5 ns, PQFP100
18-Mb (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 STANDARD SRAM, 8.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT71V67702S85BG IDT71V67902S85BGI IDT71V67902S75B |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA119
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PQFP100
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA165
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| CY7C1383DV25-133AXC CY7C1381DV25-133AXC CY7C1381DV |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 6.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PBGA165
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1447AV33-100BGC CY7C1447AV33-100BGI CY7C1447AV |
36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM
|
Cypress Semiconductor
|
| CY7C1361C |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
|
Cypress Semiconductor
|
| MT55L512L18F |
8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
