PART |
Description |
Maker |
CY7C1371D |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture(18-Mb (512K x 36/1M x 18)流通式SRAM(NoBL结构 18兆位(为512k × 36/1M × 18)流体系结构,通过与总线延迟18 MB的(12k × 36/1M × 18)流通式的SRAM(总线延迟结构)的SRAM
|
Cypress Semiconductor Corp.
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IDT71V67903S80BGI IDT71V67903S75BG IDT71V67903S75B |
3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PBGA165 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PBGA119 256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA119
|
IDT Integrated Device Technology, Inc.
|
CY7C1383F-133BGC CY7C1383F-133BGI CY7C1383F-133BGX |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 512K X 36 CACHE SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 512K X 36 CACHE SRAM, 8.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM 1M X 18 CACHE SRAM, 8.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
IDT71V67702S85BG IDT71V67902S85BGI IDT71V67902S75B |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA119 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PQFP100 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 7.5 ns, PBGA165 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA165 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Device Technology, Inc.
|
CY7C1447AV25-133BGXI CY7C1447AV25-133BGI CY7C1447A |
36-Mbit (1M x 36/2M x 18/512K x 72) Flow-Through SRAM
|
Cypress Semiconductor
|
CY7C1373B-83BZC CY7C1371B-83BZC CY7C1371B-100BZI |
512K x 36/1M x 18 Flow-Thru SRAM with NoBL Architecture 1M X 18 ZBT SRAM, 10 ns, PBGA165 512K x 36/1M x 18 Flow-Thru SRAM with NoBL Architecture 512K X 36 ZBT SRAM, 10 ns, PBGA165 512K x 36/1M x 18 Flow-Thru SRAM with NoBL Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
A67L06181-15 |
1M X 18, 512K X 36 LVTTL, Flow-through ZeBL SRAM
|
AMIC Technology
|
GVT71256ZB36 |
(GVT7xxxx) 256K x 36 / 512K x 18 Flow Thru SRAM
|
Cypress Semiconductor
|
IS61NVF51236-6.5TQL IS61NVF51236-6.5TQL-TR IS61NVF |
256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 7.5 ns, PQFP100 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 1M X 18 ZBT SRAM, 7.5 ns, PBGA165 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 7.5 ns, PQFP100 256K x 72, 512K x 36 and 1M x 18 18Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc.
|
MT55L512L18F |
8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|
A67P93181E-8.5F A67P93181E-7.5 A67P93181E-8.5 A67P |
512K X 18, 256K X 36 LVTTL, Flow-through ZeBL SRAM
|
AMICC[AMIC Technology]
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