| PART |
Description |
Maker |
| IDW15S120 |
thinQ!TM SiC Schot tky Diode
|
Infineon Technologies A...
|
| MBR10B60CTH MBR10B60FCTH |
Power Schottky Rectifier - 10Amp 60Volt
|
Sirectifier Global Corp.
|
| MBR10100CT |
Power Schottky Rectifier - 10Amp 100Volt
|
Sirectifier Global Corp.
|
| SBL10SL45CTH SBL10SL45FCTH |
Power Schottky Rectifier - 10Amp 45Volt
|
Sirectifier Global Corp.
Sirectifier Global Corp...
|
| SB1045FC |
Power Schottky Rectifier - 10Amp 45~200Volt
|
Sirectifier Global Corp.
|
| MBR10L100FCT |
Power Schottky Rectifier - 10Amp 100Volt
|
Sirectifier Global Corp.
|
| BUL72A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT30GT60BRD |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
Thunderbolt IGBT & FRED 600V 55A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| SM10200DS1 |
10Amp. Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
