PART |
Description |
Maker |
IHW40T120 |
IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode IGBTs & DuoPacks - 40A / 1200V IGBT and 18A / 1200V Diode in DuoPack
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Infineon Technologies AG
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ISL9R18120G2 ISL9R18120P2 ISL9R18120S3S |
18A/ 1200V Stealth Diode
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Fairchild Semiconductor
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RURG50120 FN3740 |
50A, 1200V Ultrafast Diode(50A, 1200V 瓒?揩??????) 50A, 1200V Ultrafast Diode(50A, 1200V 超快速二极管) 50 A, 1200 V, SILICON, RECTIFIER DIODE 50A 1200V Ultrafast Diode From old datasheet system
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HARRIS SEMICONDUCTOR Intersil, Corp. INTERSIL[Intersil Corporation]
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RURG30120 FN3399 |
30A, 1200V Ultrafast Diode(30A, 1200V 超快速二极管) 30 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247 30A/ 1200V Ultrafast Diode From old datasheet system
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Intersil, Corp. INTERSIL[Intersil Corporation]
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IRG4PH30KD IRG4PH30 |
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)
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IRF[International Rectifier]
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X4005S8-2.7 X4005S8-2.7A X4005S8-4.5A X4005S8I X40 |
RTC Module With CPU Supervisor 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8 DIODE, STUD 95A 1200VDIODE, STUD 95A 1200V; Voltage, Vrrm:1200V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Catho THYRISTOR, CAPSULE 600ATHYRISTOR, CAPSULE 600A; Voltage, Vrrm:1200V; Current, It av:600A; Case style:TO-200; Current, It rms:1400A; Current, Itsm:11500A; Voltage, Vgt:2.0V; Current, Igt:200mA; Diameter, External:57.3mm; Length / Thyristor Module; Current, It av:150A; Repetitive Reverse Voltage Max, Vrrm:1600V; Peak Surge Current:1250A; di/dt:100A/ s; Package/Case:G62 Thyristor Diode Module; Repetitive Reverse Voltage Max, Vrrm:1200V; Current Rating:220A
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Intersil, Corp. INTERSIL[Intersil Corporation]
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HGTP2N120BND HGT1S2N120BNDS HGT1S2N120BNDS9A |
12A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(12A, 1200V, NPT系列N沟道绝缘栅双极型晶体 72 MACROCELL 5 VOLT ISP CPLD - NOT RECOMMENDED for NEW DESIGN 2 A, 1200 V, N-CHANNEL IGBT, TO-220AB 12 A, 1200 V, N-CHANNEL IGBT, TO-263AB
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INTERSIL[Intersil Corporation] Intersil, Corp.
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IRF640 RF1S640SM FN1585 |
18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N娌??澧?己?????OS?烘?搴??) From old datasheet system 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
INTERSIL CORP
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FDS8672S FAIRCHILDSEMICONDUCTORCORP-FDS8672S |
N-Channel PowerTrench㈢ SyncFET⑩ 30V, 18A, 4.8mヘ N-Channel PowerTrench? SyncFET?/a> 30V, 18A, 4.8mΩ
|
Fairchild Semiconductor
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HGTG18N120BND FN4555 |
CAT6A PVC GRAY F/UTP BULK CABLE 54A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode From old datasheet system
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HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation]
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