| PART |
Description |
Maker |
| HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM511640 |
16M EDO DRAM (4-Mword x 4-bit), 50ns
16M EDO DRAM (4-Mword x 4-bit), 60ns
16M EDO DRAM (4-Mword x 4-bit), 70ns
|
Elpida Memory
|
| AS4C1M16E5 |
5V / 3.3V Edo DRAM, 16M, 1Mx16
|
ALLIANCE
|
| MT18LD1672AG-6X |
16M X 72 EDO DRAM MODULE, 60 ns, DMA168
|
|
| M53231600CJ0-C50 |
16M X 32 EDO DRAM MODULE, 50 ns, SMA72
|
|
| UG42W6414GSG UG42W6446GSG UG42W6416GSG |
16M BYTES (2M X 64 BITS) EDO MODE UNBUFFERED SODIMM
|
List of Unclassifed Manufacturers
http://
ETC[ETC]
|
| UG42W6424GSG UG42W6448GSG UG42W6428GSG |
16M BYTES (2M X 64 BITS) EDO MODE UNBUFFERED SODIMM
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| HM5116405S-5 HM5116405S-6 HM5116405S-7 HM5117405TS |
16M EDO DRAM (4-MWORD X 4-BIT) 4K REFRESH / 2K REFRESH
|
HITACHI[Hitachi Semiconductor]
|
| HM51W17805LJ-6 HM51W17805LJ-7 HM51W17805LTS-6 |
16 M EDO DRAM(2-Mword*8-bit) 2K Refresh
16M EDO DRAM(2-Mword*8-bit)2k Refresh 动态随机存取存储器62-mword*8位）2刷新
|
Hitachi,Ltd.
|
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
