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EM42CM1684RTA - Burst Length (B/L) of 2, 4, 8

EM42CM1684RTA_6037303.PDF Datasheet


 Full text search : Burst Length (B/L) of 2, 4, 8
 Product Description search : Burst Length (B/L) of 2, 4, 8


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IDT71V35761 IDT71V35761YS200BG IDT71V35761YS200BGI CABLE, COAX, RG58, LSF, BLACK, 100M; Length, Reel (Imperial):328ft; Attenuation, 1 GHz:50.0dB; Attenuation, 10 MHz:4.5dB; Attenuation, 200 MHz:22.0dB; Attenuation, 400MHz:32.0dB; Capacitance:100pF/m; Conductor make-up:19/0.18 mm; RoHS Compliant: Yes
CABLE, COAX, RG5900, WHITE, 100M; Attenuation, 1 GHz:42.9dB; Attenuation, 100 MHz:11.6dB; Attenuation, 400MHz:25.0dB; Attenuation, 5.0 MHz:2.9dB; Attenuation, 50 MHz:8.0dB; Capacitance:67pF/m; Colour, primary insulation:White; RoHS Compliant: Yes
CABLE, COAX, RG5900, BLACK, 500M; Length, Reel (Imperial):1640.4ft; Attenuation, 1 GHz:42.9dB; Attenuation, 100 MHz:11.6dB; Attenuation, 400MHz:25.0dB; Attenuation, 5.0 MHz:2.9dB; Attenuation, 50 MHz:8.0dB; Capacitance:67pF/m; RoHS Compliant: Yes
CABLE, COAX, RG59, LSF, BLACK, 100M; Length, Reel (Imperial):328ft; Attenuation, 1 GHz:42.9dB; Attenuation, 100 MHz:11.6dB; Attenuation, 400MHz:25.0dB; Attenuation, 5.0 MHz:2.9dB; Attenuation, 50 MHz:8.0dB; Capacitance:67pF/m; RoHS Compliant: Yes
CABLE, COAX, RG58, LSF, BLACK, 500M; Attenuation, 1 GHz:50.0dB; Attenuation, 10 MHz:4.5dB; Attenuation, 200 MHz:22.0dB; Attenuation, 400MHz:32.0dB; Capacitance:100pF/m; Conductor make-up:19/0.18 mm; Diameter, External:4.95mm; RoHS Compliant: Yes
CABLE, COAX, RG5900, WHITE, 500M; Length, Reel (Imperial):1640.4ft; Attenuation, 1 GHz:42.9dB; Attenuation, 100 MHz:11.6dB; Attenuation, 400MHz:25.0dB; Attenuation, 5.0 MHz:2.9dB; Attenuation, 50 MHz:8.0dB; Capacitance:67pF/m; RoHS Compliant: Yes
CABLE, COAX, TWIN, BLACK, COMP, 100M; Length, Reel (Imperial):328ft; Attenuation, 1 GHz:42.9dB; Attenuation, 100 MHz:11.6dB; Attenuation, 300 MHz:21.2dB; Attenuation, 400MHz:25.0dB; Attenuation, 5.0 MHz:2.9dB; Attenuation, 50 RoHS Compliant: Yes
CABLE, COAX, RG59, LSF, BLACK, 500M; Length, Reel (Imperial):1640.4ft; Attenuation, 1 GHz:42.9dB; Attenuation, 100 MHz:11.6dB; Attenuation, 400MHz:25.0dB; Attenuation, 5.0 MHz:2.9dB; Attenuation, 50 MHz:8.0dB; Capacitance:67pF/m; RoHS Compliant: Yes
CHOKE COIL 1000UH 410MA SMD
CHOKE COIL 180UH 930MA SMD
RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 5K/AMMO
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.5 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.3 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.5 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.3 ns, PQFP100
RECTIFIER FAST-RECOVERY SINGLE 3A 800V 150A-ifsm 1.7V-vf 75ns 5uA-ir DO-201AD 5K/REEL-13 256K X 18 CACHE SRAM, 3.3 ns, PBGA165
128K x 36/ 256K x 18 3.3V Synchronous SRAMs 3.3V I/O/ Pipelined Outputs Burst Counter/ Single Cycle Deselect
RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK 256K X 18 CACHE SRAM, 3.3 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 128K的3656 × 18 3.3同步SRAM.3V的I / O的输出脉冲计数器流水线,单周期取
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.1 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.1 ns, PBGA165
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Numonyx B.V
GS881E36 GS881E36T-11.5I GS881E36T-66I GS881E36T-1 512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位(256K x 36位)ByteSafe同步静态RAM(带2位脉冲地址计数器))
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GSI Technology
GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 10ns 256K x 18 4Mb sync burst SRAM
12ns 256K x 18 4Mb sync burst SRAM
8.5ns 256K x 18 4Mb sync burst SRAM
8ns 256K x 18 4Mb sync burst SRAM
10ns 128K x 32 4Mb sync burst SRAM
GSI Technology
CY7C1303AV25-100BZC CY7C1306AV25-100BZC CY7C1303AV Memory : Sync SRAMs
18-Mb Burst of 2 Pipelined SRAM with QDR(TM) Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR⑩ Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR?/a> Architecture
Cypress Semiconductor
CY7C1561KV18 CY7C1561KV18-400BZC CY7C1561KV18-400B 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.29 ns, PBGA165
72-Mbit QDR-II SRAM 4-Word Burst Architecture
Cypress Semiconductor, Corp.
CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300 72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
Cypress Semiconductor, Corp.
M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位(x16插槽,多银行,多层次,多突发28兆位闪存(突发)移动存储芯片.8V电源,多芯片封装
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
75757-5431 3.50mm (.138) Pitch, MX150?/a> Header, Breakaway, Vertical, 6 Circuits, 1.5μm (60μ) Tin (Sn) Plating, 16.09mm (.633) Mating Pin Length, 3.05mm (.120) PC Tail Length
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