| PART |
Description |
Maker |
| WMS128K8V-17 WMS128K8V-35 WMS128K8V-20DRMA WMS128K |
128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM（存取时7ns
128Kx8 3.3单片的SRAM28Kx83.3伏，单片静态随机存储器（存取时间为35ns））
128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32
128K X 8 STANDARD SRAM, 15 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 17 ns, CDIP32 SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
128K X 8 STANDARD SRAM, 20 ns, CDFP32
|
White Electronic Designs Corporation
White Electronic Designs, Corp.
|
| K6R1008V1B-B-L K6R1008V1B-C10 K6R1008V1B-C8 K6R100 |
128K X 8 STANDARD SRAM, 10 ns, PDSO32
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges 128Kx8位高速静态RAM.3V的工作），革命销出。在商用和工业温度范围运
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IC61LV6416 IC61LV6416-8TI IC61LV6416-10B IC61LV641 |
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
RES,78.7,1/8W,1%,FXD,SMT,THKF,1206
64K x 16 Hight Speed SRAM with 3.3V 64K的16 Hight高速SRAM.3V
|
ICSI[Integrated Circuit Solution Inc]
Ecliptek, Corp.
|
| KM681001B KM681001B-15 KM681001B-20 |
From old datasheet system
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
128K x 8 Bit High-Speed CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM681001A KM681001A-15 KM681001A-20 |
128K x 8 Bit High-Speed CMOS Static RAM
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
From old datasheet system
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (256-kword X 16-bit)
From old datasheet system
|
http://
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| HM3-65789 HM3-65788H-2 HM3-65788H-5 HM3-65788H-8 H |
HIGH SPEED CMOS SRAM
HIGH SPEED CMOS SRAM 高速CMOS的SRAM
560KBITS BRAM 400000 SYSTEM GATES 404 I/ - NOT RECOMMENDED for NEW DESIGN
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
http://
|
| K6R1008C1C |
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
|
SAMSUNG
|
| P4C148-55PM P4C149 P4C149-25CC P4C149-25CM P4C149- |
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 超高速每1000 × 4静态CMOS五羊
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 25 ns, CQCC18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 10 ns, PDIP18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 20 ns, CQCC18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 超高速每1000 × 4静CMOS五羊
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 35 ns, CQCC18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 35 ns, CDIP18
ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS 1K X 4 STANDARD SRAM, 15 ns, CDIP18
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
