| PART |
Description |
Maker |
| LTC3806 LTC3806EDE |
Synchronous Flyback DC/DC Controller
|
Linear Technology
|
| AEP-483SI |
POE SYNCHRONOUS FLYBACK TRANSFORMER
|
Allied Components International
|
| EPC3410G-LF |
PoE Synchronous Flyback Transformer
|
PCA ELECTRONICS INC.
|
| NCP4302 |
NCP4302 Secondary Side Synchronous Flyback Controller
|
ON Semiconductor
|
| LT4276 |
PoE PD with Synchronous Flyback and Ideal Diode Bridge
|
Linear Technology
|
| LTC4268CDKD-1 LTC4268CDKD-1-PBF LTC4268CDKD-1-TR L |
High Power PD with Synchronous NoOpto Flyback Controller
|
Linear Technology
|
| LTC4269IDKD-1-PBF LTC4269IDKD-1-TRPBF LTC4269CDKD- |
IEEE 802.3at PD with Synchronous No-Opto Flyback Controller
|
Linear Technology
|
| EVALPM8803-FLY |
EVALPM8803-FLY: IEEE802.3at compliant demonstration kit with synchronous flyback PoE converter
|
STMicroelectronics
|
| IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）5A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本0V的，身份证（续）5A条，的Rds（on.027Ω））
|
SemeLAB
Seme LAB
International Rectifier
http://
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
| AS3668 AS3668-BQFT |
4 Channel Breathl ight Cont rol ler
|
austriamicrosystems AG
|
