| PART |
Description |
Maker |
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| EM10DINAV81XP EM10DIN EM10DINAV71X EM10DINAV71X01 |
Energy Management Energy Meter
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| CS5464-IS |
Three-channel, Single-phase Power/Energy IC
|
Cirrus Logic, Inc.
|
| IRF440R IRFP442R IRFP443R IRFP441R |
Avalanche Energy Rated N-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| LND056-48 |
180V, 96 Channel MEMs Driver with DC/DC & Energy Savings Subsystem
|
Linear Dimensions Semiconductor
|
| IRF533 |
(IRF530 - IRF533) N-Channel Power MOSFETs Avalanche Energy Rated
|
Harris Corporation
|
| MAL222091001E3 MAL222090004E3 |
Electrical Double Layer Energy Storage Capacitors Power and Energy Versions
|
Vishay Siliconix
|
| PHD2N60E PHP2N60E PHB2N60E |
PowerMOS transistors Avalanche energy rated 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHW9N60E PHB9N60E |
PowerMOS transistors Avalanche energy rated
GT 10C 10#16 SKT PLUG RTANG 9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| SFT1002 SFT1004 SFT1012 SFT1010 SFT1014 SFT1016 |
250 V, 100 A high speed NPN transistor
120 V, 100 A high energy NPN transistor
100 V, 100 A high energy NPN transistor
140 V, 100 A high energy NPN transistor
160 V, 100 A high energy NPN transistor
|
Solid State Devices Inc
|
| EVAL-ADE7759E ADE7759ARS ADE7759ARSRL |
Active Energy Metering IC with di/dt Sensor Interface
8-Channel 14-Bit Single-Supply Voltage-Output DAC; Package: LQFP (10x10mm); No of Pins: 52; Temperature Range: Industrial
|
Analog Devices, Inc.
|
