| PART |
Description |
Maker |
| MRF9210 MRF9210R3 |
MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET
RF Power Field Effect Transistor
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MRF21060L MRF21060 MRF21060LR3 MRF21060LSR3 |
RF Power Field Effect Transistors
2110??170 MHz, 60 W, 28 V Lateral N??hannel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器，红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm
From old datasheet system
|
红外LED
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AGR21045EF |
45 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| CGY2010G-T |
880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP SEMICONDUCTORS
|
| LDC18897M20Q-361 |
880 MHz - 915 MHz RF/MICROWAVE DIRECTIONAL COUPLER, 0.22 dB INSERTION LOSS-MAX
|
MURATA MANUFACTURING CO LTD
|
| MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P2 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
|
FREESCALE[Freescale Semiconductor, Inc]
MOTOROLA
|
| 2729-170 |
170 Watts, 38 Volts, 100μs, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100渭s, 10% Radar 2700-2900 MHz
170 Watts, 38 Volts, 100刁, 10% Radar 2700-2900 MHz
|
MICROSEMI[Microsemi Corporation]
|
| SFH485P Q62703-Q516 Q62703-Q2761 Q62703-Q2851 Q627 |
Super SIDELED High-Current LED 超SIDELED高电流LED
GaAIAs-IR-Lumineszenzdiode (880 nm)GaAIAs Infrared Emitter (880 nm)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| ADPQ-ED10603/1 |
70 MHz - 170 MHz RF/MICROWAVE COMBINER, 0.25 dB INSERTION LOSS CASE X0, 6 PIN
|
Mini-Circuits
|
