PART |
Description |
Maker |
DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五(巴西)直| 5A条(丁) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五(巴西)直| 35A条(丁) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd. Glenair, Inc.
|
MP4305 |
Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. TOSHIBA Power Transistor Module Silicon PNP Epitaxial Type (Darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
BUT30V03 BUT32V03 WM872104 BUT30V_03 BUT30V |
NPN TRANSISTOR POWER MODULE Internet Audio DAC with Integrated Headphone Driver NPN TRANSISTOR POWER MODULE
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] WOLFSON
|
MP4025 |
Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1)
|
TOSHIBA[Toshiba Semiconductor]
|
MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
MP4020 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 8A条一(c TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五(巴西)国际消费电子展|5A一(c)|米:HL080HD5.3 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 75A条一(c
|
Delta Electronics, Inc. Fuji Electric Holdings Co., Ltd. Infineon Technologies AG
|
2DI150D-050 |
Power transistor module for high power switching, AC and DC motor control applications From old datasheet system
|
COLLMER SEMICONDUCTOR INC FUJI[Fuji Electric] FUJI ELECTRIC HOLDINGS CO., LTD.
|
WF8M32-XG4DX5 WF8M32-150G4DC5 WF8M32-120G4DI5 WF8M |
100ns; 5V power supply; 8M x 32 flash module 120ns; 5V power supply; 8M x 32 flash module 150ns; 5V power supply; 8M x 32 flash module 8M X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68 40 MM, DUAL CAVITY, CERAMIC, QFP-68 8Mx32 5V Flash Module(8Mx32 5V闪速存储器模块) Flash MCP
|
Glenair, Inc. White Electronic Designs Corporation
|
ETG81-050A |
POWER TRANSISTOR MODULE
|
Fuji Electric
|
EVK71-050 |
Power Transistor Module
|
Fuji Electric
|
6DI15M-120 |
POWER TRANSISTOR MODULE
|
FUJI[Fuji Electric]
|