Part Number Hot Search : 
FM4749W EW6140 BT827B RGP10A AOD422L IECJ1 1212A X9221YPI
Product Description
Full Text Search

CXK77B3640GB - 4Mb Late Write HSTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入HSTL高速同步SRAM28K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)

CXK77B3640GB_5892693.PDF Datasheet


 Full text search : 4Mb Late Write HSTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入HSTL高速同步SRAM28K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)
 Product Description search : 4Mb Late Write HSTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入HSTL高速同步SRAM28K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)


 Related Part Number
PART Description Maker
CXK77B1841AGB CXK77B3641AGB 4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位)
4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速(128K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)同步静态存储器
Sony, Corp.
MCM63R836A 8M Late Write HSTL
Motorola, Inc
MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 MCM69R737A/D 4M Late Write LVTTL
ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
Motorola, Inc
Motorola Mobility Holdings, Inc.
HM64YLB36512BP-33 HM64YLB36512BP-28 HM64YLB36512-1 512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
Renesas Electronics Corporation
UPD4443362 UPD4443362GF-A75 4M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 128K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
NEC Corp.
NEC[NEC]
HM62G18512ABP-30 HM62G18512ABP-33 Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
Renesas
GS8170DW36C-250 GS8170DW36C-250I GS8170DW36C-300 G 250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
GSI Technology
MCM69L820AZP9R MCM69L738A MCM69L738AZP8.5 MCM69L73 4M Late Write 2.5 V I/O
MOTOROLA[Motorola, Inc]
MCM69R536ZP4.4R 32K X 36 LATE-WRITE SRAM, 2.2 ns, PBGA119
MOTOROLA INC
GS8170LW36AGC-250 GS8170LW36AC-350 GS8170LW36AC-35 18Mb ヒ1x1Lp CMOS I/O Late Write SigmaRAM
GSI[GSI Technology]
K7Z167288B K7Z163688B 512Kx36 & 256Kx72 DLW(Double Late Write) RAM
Samsung semiconductor
MT59L128V36PB-4.5 128K X 36 LATE-WRITE SRAM, 2.25 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
Cardinal Components, Inc.
 
 Related keyword From Full Text Search System
CXK77B3640GB Planar CXK77B3640GB mount CXK77B3640GB Gain CXK77B3640GB poliester CXK77B3640GB 电子元器件
CXK77B3640GB Price CXK77B3640GB frequency CXK77B3640GB Untuk apa ic CXK77B3640GB video CXK77B3640GB electronics
 

 

Price & Availability of CXK77B3640GB

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.12709593772888