| PART |
Description |
Maker |
| 2N604006 2N6042G 2N6040G 2N6043G 2N6045G 2N6040 2N |
Plastic Medium−Power Complementary Silicon Transistors
Plastic Medium?Power Complementary Silicon Transistors
|
http://
ONSEMI[ON Semiconductor]
|
| BDX53CG BDX53B07 |
Plastic Medium-Power Complementary Silicon Transistors
|
Rectron Semiconductor
|
| BD159 BD157 BD158 |
Plastic Medium Power NPN Silicon Transistor
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| MJE340G-13 |
Plastic Medium-Power NPN Silicon Transistor
|
ON Semiconductor
|
| BD180-D |
Plastic Medium Power Silicon PNP Transistor
|
ON Semiconductor
|
| MJE10B3 MJE1093PNP MJE2090 MJE2103 MJE2100 MJE2102 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| 2N604007 2N6040G |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
| BD237-D |
Plastic Medium Power Silicon NPN Transistor
|
ON Semiconductor
|
| BDX53B-D |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
| TIP100 TIP102 TIP100-BP TIP101-BP TIP102-BP |
NPN Plastic Medium-Power Silicon Transistors
|
天津环球磁卡股份有限公司
Micro Commercial Components
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
