| PART |
Description |
Maker |
| CCR1 CCR CCR1Z-1K2KI CCR1Z-1K8KI CCR1Z-1K5KI CCR1Z |
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 390 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 270 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 560 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 2200 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 680 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 820 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 10000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 2700 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 3300 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 220 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 330 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 900 ppm, 470 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 22000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 12000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 18000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 15000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1000 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1500 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1800 ohm, SURFACE MOUNT
RESISTOR, CARBON COMPOSITION, 1 W, 10 %, 1300 ppm, 1200 ohm, SURFACE MOUNT
Carbon Ceramic Resistors
|
Welwyn Components, Ltd.
Welwyn Components Limited
TT Electronics / Welwyn
|
| 2SK2006-4072 |
5 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| J174 J176 J177 J175 |
P-channel silicon field-effect transistors
RESISTOR SILICONE 900 OHM 5W
|
Philips Semiconductors / NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| FQP3N90 |
900V N-Channel MOSFET 3.6 A, 900 V, 4.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQP2N90 |
900V N-Channel MOSFET 2.2 A, 900 V, 7.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQP5N90 |
900V N-Channel MOSFET 5.4 A, 900 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IXFX52N30Q IXFX16N90Q |
52 A, 300 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
16 A, 900 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS CORP
|
| 9N90L-T47-T 9N90G-T47-T 9N90G-T3P-T 9N90L-T3P-T 9N |
900V N-CHANNEL MOSFET
9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
|
| IXFT16N90Q IXFH16N90Q IXFK16N90Q |
HiPerFET Power MOSFETs Q-Class 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
|
