| PART |
Description |
Maker |
| MTW10N100E-D |
Power MOSFET 10 Amps, 1000 Volts N-Channel TO-247
|
ON Semiconductor
|
| NTF3055L175T1 NTF3055L175T1G |
Power MOSFET 2 Amps, 60 Volts, Logic Level N Channel SOT-223; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 2 A, 60 V, 0.175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET 2.0 A, 60 V, Logic Level 2 A, 60 V, 0.175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
|
ON Semiconductor
|
| NTTD1P02R2-D NTTD1P02R2/D |
Power MOSFET -1.45 Amps-20 Volts
Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package
|
ON Semiconductor
|
| APT10078BFLL_06 APT10078BFLL APT10078BFLL06 APT100 |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| NTMD2P01R2 NTMD2P01R2-D |
Power MOSFET -2.3 Amps, -16 Volts Dual SO-8 Package
Power MOSFET -2.3 Amps, -16 Volts Dual SO Package(-2.3A16V，双通道SO-8封装的功率MOSFET) 2.3 A, 16 V, 0.1 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| MTB2P50ET4 MTB2P50ET4G MTB2P50E |
Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
|
ON Semiconductor
|
| NTF3055-100 NTF3055-100T3G |
Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223(3A,60V逻辑电平,N通道 SOT-223 封装的功率MOSFET)
Power MOSFET 3.0 Amps 60 Volts N−Channel
|
ON Semiconductor
|
| MTY55N20E |
OBSOLETE - Power MOSFET 55 Amps, 200 Volts
N?Channel Power MOSFET
|
ON Semiconductor
|
| IRFPG50 SIHFPG50 SIHFPG50-E3 IRFPG50PBF IRFPG50-20 |
6.1 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC ROHS COMPLIANT, TO-247, 3 PIN
Power MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
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