| PART |
Description |
Maker |
| NT128S64VH4A0GM0-7K |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD
|
NANYA
|
| M366S1654CTS-C7A M366S1654CTS-L1L M366S1654CTS-C7C |
16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM的内存在16Mx16显示BanksK的刷新，3.3V的同步DRAM的社民党
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KMM366S1623AT-G8 KMM366S1623AT KMM366S1623AT-G0 KM |
16M x 64 SDRAM DIMM
16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG[Samsung semiconductor]
|
| M366S1623ET0 |
16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung semiconductor
Samsung Electronic
|
| HYMD116645BL8-K HYMD116645BL8-L HYMD116645BL8-M HY |
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX64|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 16MX64 |的CMOS |内存| 184PIN |塑料
16Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
http://
|
| M464S0924CT1 M464S0924CT1-C1H M464S0924CT1-C1L M46 |
8Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L6423CK0 |
64Mx64 200pin DDR SDRAM SODIMM based on DDP 64Mx8 Data Sheet
|
Samsung Electronic
|
| M464S6453DKS |
64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| M464S6554MTS |
64Mx64 SDRAM SODIMM based on 32Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
