| PART |
Description |
Maker |
| 22N60 22N60G-T47-T 22N60L-T47-T 22N6011 |
22A, 600V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| FCPF22N60NT |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
|
Fairchild Semiconductor
|
| RJH60D0DPQ-E0 RJH60D0DPQ-E0-T2 |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| STL100NHS3LL |
N-channel 30V - 0.0032Ω - 22A - PowerFLAT?(6x5) STripFET?Power MOSFET plus monolithic Schottky
N-channel 30V - 0.0032ヘ - 22A - PowerFLAT⑩ (6x5) STripFET⑩ Power MOSFET plus monolithic Schottky
N-channel 30V - 0.0032Ω - 22A - PowerFLAT (6x5) STripFET Power MOSFET plus monolithic Schottky
|
STMicroelectronics
|
| JANSR2N7403 FN4486 |
22 A, 100 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
From old datasheet system
22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET
22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| HUF75623P3 FN4804 |
22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFET 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
22A/ 100V/ 0.064 Ohm/ N-Channel/ UltraFET Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRFUC20 IRFRC20 IRFUC20PBF |
600V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A)
(IRFRC20 / IRFUC20) Power MOSFET
|
IRF[International Rectifier]
|
| RSD221N06 |
Nch 60V 22A Power MOSFET
|
Rohm
|
| HFA35HB60 |
600V 22A Hi-Rel Ultra-Fast Discrete Diode in a TO-254AA package
22 A, SILICON, RECTIFIER DIODE, TO-254AA
|
International Rectifier
|
| IRFIBC30G IRFIBC30 |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A)
Power MOSFET(Vdss=600V/ Rds(on)=2.2ohm/ Id=2.5A)
|
IRF[International Rectifier]
|
| FDMS5672 |
N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mohm 10.6 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FCH22N60N |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
Ultra Low Gate Charge (Typ. Qg = 45 nC), Low Effective Output Capacitance (Typ. Coss.eff = 196.4 pF)
|
Fairchild Semiconductor
|
