| PART |
Description |
Maker |
| AP2129K-1.0TRG1 AP2129K-1.2TRG1 AP2129K-3.3TRG1 AP |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
| AP2129K-ADJTRG1 AP2129K-3.3TRG1 AP2129K-1.0TRG1 AP |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
Diodes
|
| AP2128K-4.2TRG1 AP2128K-4.75TRG1 AP2128K-1.5TRG1 A |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
| AP2128K-1.0TRG1 AP2128K-1.2TRG1 AP2128K-3.3TRG1 AP |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
|
| KDW2503N |
5.5 A, 20 V. RDS(ON) = 0.021 Fast switching speed High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AP2120N-5.0TRG1 AP2120N-2.5TRG1 AP2120N-2.8TRG1 AP |
5 V FIXED POSITIVE LDO REGULATOR, 0.3 V DROPOUT, PDSO3 GREEN, SOT-23, 3 PIN
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing, Ltd.
BCD Semiconductor Manufacturing Limited
|
| FDG328P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| FDG315N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2310 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2302 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AMS2301A |
Super high density cell design for extremely low
|
Advanced Monolithic Systems Ltd
|
