| PART |
Description |
Maker |
| UFL200CB60P |
Not Insulated SOT-227 Power Module Ultrafast Rectifier, 200 A
|
Vishay Siliconix
|
| GA200SA60U |
600V UltraFast 10-30 kHz Single IGBT in a SOT-227 package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| GA200SA60S |
600V DC-1 kHz (Standard) Single IGBT in a SOT-227 package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| UFB120FA40 |
Insulated Ultrafast Rectifier Module 绝缘超快整流模块
400V 120A Ultrafast Doubler Diode in a SOT-227 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FA38SA50LC |
500V Single N-Channel HEXFET Power MOSFET in a SOT-227 (Iso) package
|
IRF[International Rectifier]
|
| HXP-1R682 |
RESISTOR, WIRE WOUND, 200 W, 2 %, 0.68 ohm, STUD MOUNT SOT-227
|
Coilcraft, Inc.
|
| HFA120EA60 HFA120FA60 |
600V 60A HEXFRED Discrete Diode in a SOT-227 package
HEXFREDTM Ultrafast, Soft Recovery Diode
|
IRF[International Rectifier]
|
| BUZ901X4S MNT-LC32030-C4 |
32 A, 200 V, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SOT-227, 4 PIN
32 A, 200 V, N AND P-CHANNEL, Si, POWER, MOSFET SMARTPACK-10
|
TT electronics Semelab, Ltd.
|
| Q62703-Q3854 Q62703-Q2290 Q62703-Q3081 Q62703-Q251 |
Super TOPLED High-Current LED
Shielded Paired Cable; Number of Conductors:2; Number of Pairs:1; Leaded Process Compatible:Yes RoHS Compliant: Yes
DIODE FRED 200V 2X123A SOT-227
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Siemens Semiconductor G...
|
| CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
|
| BCR16B BCR16C BCR16E |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
|
