| PART |
Description |
Maker |
| UMD3N |
Multi-Chip Digital Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| 585-3211 585-3213 585-3215 585-3221 585-3225 585-3 |
Multi-Chip BASED LED T1 3/4 Bi-Pin
585 SERIES BASED LEDs-MULTI-CHIP SINGLE COLOR DISPLAY CLUSTER, RED, 5.9 mm
|
Dialight Corporation
Dialight PLC
|
| 585-2325 585-2225 585-2211 585-2413 585-2415 585-2 |
Multi-Chip BASED LED T 1 3/4 Wedge
BASED LEDs-MULTI-CHIP SINGLE COLOR DISPLAY CLUSTER, RED, 5.9 mm
|
Dialight Corporation
Dialight PLC
|
| UMH15N |
NPN Multi-Chip Built-in Resistors Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| TPCP8H01 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| TPCP8H02 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| M36L0R7040B0 M36L0R7040B0ZAQE M36L0R7040B0ZAQF M36 |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| S75WS256NDFBFWLJ3 S75WS256NDFBAWLK2 S75WS256NDFBFW |
Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品（MCP
Stacked Multi-Chip Product (MCP) SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion, Inc.
SPANSION LLC
|
| M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
| CP305 |
Chip Form: SILICON TRANSISTOR
Small Signal Transistor NPN - High Current Transistor Chip
|
CENTRAL[Central Semiconductor Corp]
|
| M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
