| PART |
Description |
Maker |
| K7A803600B-QC14 K7A803600B-QC16 K7A803609B K7A8036 |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256Kx36
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256Kx36 & 512Kx18 SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7N801849B K7N803649B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
| K7N801801M |
256Kx36 & 512Kx18 Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| K7P801811M-H20 K7P801811M-H21 K7P801811M-H25 K7P80 |
256Kx36 & 512Kx18 SRAM
256Kx36 & 512Kx18 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| DSK7A803600B K7A803600B K7A801800B DS_K7A803600B |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7B803625M K7B801825M |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7N801801A |
512Kx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM
1.8V 512K x 36 QDR II PipeLined SRAM
Storage, Cases
Tools, Applicator RoHS Compliant: NA
Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA
SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA
18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT
http://
Integrated Device Technology, Inc.
|
| KM736V887 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM736S849 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM736V847 |
256Kx36-Bit Flow Through No Turnaround SRAM(256Kx36位数据流无返回静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
