| PART |
Description |
Maker |
| KA2139 |
Tantalum Molded High Capacitance Capacitor; Capacitance: 10uF; Voltage: 16V; Packaging: Tape & Reel 三通道RGB视频放大
3 CHANNEL R.G.B VIDEO AMPLIFIER
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| HVU202B |
Diodes>Variable Capacitance
Variable Capacitance Diode for UHF/VHF tuner
|
Renesas Electronics Corporation
|
| BB565 Q62702-B0873 Q62702-B0869 |
From old datasheet system
Silicon Variable Capacitance Diode (For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance)
|
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| SGH30N60RUF SGH30N60RUFTU |
Discrete, Short Circuit Rated IGBT
Ceramic Multilayer Capacitor; Capacitance:2200pF; Capacitance Tolerance: 50, -20 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:W2F; Features:Feedthru; Leaded Process Compatible:Yes
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB
From old datasheet system
|
NXP Semiconductors N.V.
Philipss
Philips Semiconductors
|
| HVU350B |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVU316 |
Diodes>Variable Capacitance
Variable Capacitance Diode for BS/CS tuner
|
Renesas Electronics Corporation
|
| GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes
C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| BB145_2 BB145 BB145T/R BB145115 |
6.9 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode
From old datasheet system
|
NXP Semiconductors
Philipss
|
