| PART |
Description |
Maker |
| STL5NK65Z L5NK65Z |
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESH?Power MOSFET
N-CHANNEL 650V 1.5 OHM 4.2A POWERFLAT ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT⑩ Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLATZener-Protected SuperMESH⑩Power MOSFET N沟道650V - 1.5ohm - 4.2A的PowerFLAT⑩齐保护SuperMESH⑩功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| FQP7N65C FQPF7N65C |
650V N-Channel Advance Q-FET C-Series
650V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STP15NM65N STF15NM65N STW15NM65N STB15NM65N STI15N |
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 650V - 0.25ヘ - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
|
| FDA15N65 |
N-Channel UniFETTM MOSFET 650V, 16A, 440m
650V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| TSM12N65CIC0 |
650V N-Channel Power MOSFET
|
Taiwan Semiconductor Company, Ltd
|
| 5N65Z |
5A 650V N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES
|
| 7N65L-TF2-T 7N65G-T2Q-T 7N65G-TA3-T 7N65G-TF1-T 7N |
7.4A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 4N65KL-TF3-T 4N65KG-TF3-T |
4A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 7N65A 7N65AG-TA3-T 7N65AG-TF1-T 7N65AG-TF3-T 7N65A |
7A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 10N65Z |
10A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7
Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220
Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
