| PART |
Description |
Maker |
| MRFIC1859 |
Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射频功
|
Motorola, Inc.
|
| 2SC5171 E001055 |
From old datasheet system
POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS
NPN EPITAXIAL TYPE (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1837 E000568 |
From old datasheet system
POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS
TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| RF5110 RF5110PCBA |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| RF2173PCBA-41X RF21731 |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| AWT6172RM33P8 AWT6172RM33P9 AWT6172HM33P8 AWT6172H |
GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| AWT6168 |
GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc.
|
| MRFIC0970 |
3.2V GSM GaAs Intergrated Power Amplifier 3.2V的集成的GSM砷化镓功率放大器
|
飞思卡尔半导体(中国)有限公司
Freescale Semiconductor, Inc
|
| PF01412A PF01412 |
IC,RF AMPLIFIER,HYBRID,MODULE,8PIN,PLASTIC
From old datasheet system
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Hitachi America
HITACHI[Hitachi Semiconductor]
|
