| PART |
Description |
Maker |
| MS1011 |
RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| MS1000 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| SD1487 2818 |
From old datasheet system
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
STMICROELECTRONICS[STMicroelectronics]
|
| MS1001 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Bipolar/LDMOS Transistor
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi Corporation
|
| 2SC2395 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE)
|
TOSHIBA
|
| 2SC2879 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE)
|
Toshiba Semiconductor
|
| 2SC2510 E000727 |
From old datasheet system
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28v SUPPLY VOLTAGE USE)
|
Toshiba Semiconductor
|
| 2SC2290 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA
|
| 2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA
|
| MS1227 |
HF 2-50 MHz, Class C, Common Emitter; P(out) (W): 20; P(in) (W): 0.65; Gain (dB): 15; Vcc (V): 12.5; Cob (pF): 100; fO (MHz): 0; Case Style: M113 HF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Microsemi, Corp.
ADPOW
|
| MS1007 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; Case Style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
