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IRG4BC30WPBF - INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)最大\u003d 2.70V @和VGE \u003d 15V的,集成电路\u003d 12A条)

IRG4BC30WPBF_5706065.PDF Datasheet


 Full text search : INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)最大\u003d 2.70V @和VGE \u003d 15V的,集成电路\u003d 12A条)
 Product Description search : INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)最大\u003d 2.70V @和VGE \u003d 15V的,集成电路\u003d 12A条)


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