| PART |
Description |
Maker |
| IPT1208-SEA IPT1208-CEA IPT1208-BEA IPT1208-TEA |
High current density due to double mesa technology
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
IP SEMICONDUCTOR CO., L...
|
| IPT1208-SEB IPT1208-TEB IPT1208-CEB IPT1208-BEB |
High current density due to double mesa technology
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
IP SEMICONDUCTOR CO., L...
|
| IPT1206-TEA IPT1206-CEA IPT1206-BEA IPT1206-SEA |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| MCN51-8S3-PFA MCN51-16P2-DS MCN51-16P2-PFA MCN51-1 |
CAP 0.1UF 50V 20% Z5U RAD.20 .20X.20 BULK 高电流，高密度，电源连接
16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 高电流，高密度，电源连接
High Current, High Density, Power Connectors 高电流，高密度，电源连接
High Current / High Density / Power Connectors
|
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD
170 MHz in-system prommable high density PLD
125 MHz in-system prommable high density PLD
100 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes
In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ISPLSI2064VE ISPLSI2064VE-100LB100 ISPLSI2064VE-10 |
3.3V In-System Programmable High Density SuperFAST?PLD
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 7 ns, PQFP44
CRYSTAL 16.0 MHZ 20PF SMD EE PLD, 13 ns, PQFP100
CRYSTAL 20.0 MHZ 20PF SMD
RES 180K-OHM 1% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM
3.3V In-System Programmable High Density SuperFAST PLD
3.3V In-System Programmable High Density SuperFAST⑩ PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
280 MHz 3.3V in-system prommable superFAST high density PLD
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| SS10PH10-E3_86A SS10PH10 SS10PH10-E3_87A SS10PH9 |
High Current Density Surface Mount High-Voltage Schottky Rectifier
|
Vishay Siliconix
|
| SS10PH10-E3/86A SS10PH10-E3/87A |
High Current Density Surface Mount High-Voltage Schottky Rectifier
|
Vishay Siliconix
|
| S4PJ-M3/86A S4PJ-M3/87A S4PG-M3 S4PJHM3/87A S4PJHM |
High Current Density Surface Mount
|
Vishay Siliconix
|
| SSC53LHE3_57T SSC53LHE3_9AT SSC53L-E3/57T SSC53L-E |
High-Current Density Surface Mount Schottky Rectifier
|
Vishay Siliconix
|
| SSA23L08 SSA23LHE3_5AT SSA23LHE3_61T SSA23L-E3/5AT |
High-Current Density Surface Mount Schottky Rectifier
|
Vishay Siliconix
|
