PART |
Description |
Maker |
IPT0806-SEI |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
IPT1208-SEF IPT1208-TEF IPT1208-CEF IPT1208-BEF |
High current density due to double mesa technology High current density due to double mesa technology
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IP SEMICONDUCTOR CO., LTD. IP SEMICONDUCTOR CO., L...
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ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA |
60 MHz in-system prommable high density PLD 170 MHz in-system prommable high density PLD 125 MHz in-system prommable high density PLD 100 MHz in-system prommable high density PLD Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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ISPLSI2128VE ISPLSI2128VE-100LB100 ISPLSI2128VE-10 |
3.3V In-System Programmable SuperFAST?High Density PLD CRYSTAL 32.768KHZ 12.5PF SMD 3.3V In-System Programmable SuperFAST?/a> High Density PLD 3.3V In-System Programmable SuperFAST⑩ High Density PLD 3.3V In-System Programmable SuperFAST High Density PLD CRYSTAL 12.0 MHZ 20PF SMD 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA208 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 6 ns, PBGA208 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PBGA100 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PBGA100 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP160 3.3V In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP100 3.3V In-System Programmable SuperFASTHigh Density PLD 3.3在系统可编程超快⑩高密度可编程逻辑器件 3.3VIn-SystemProgrammableSuperFASTHighDensityPLD 3.3V In-System Programmable SuperFAST?/a> High Density PLD
|
LATTICE[Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
|
ISPLSI2064VE ISPLSI2064VE-100LB100 ISPLSI2064VE-10 |
3.3V In-System Programmable High Density SuperFAST?PLD 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 7 ns, PQFP44 CRYSTAL 16.0 MHZ 20PF SMD EE PLD, 13 ns, PQFP100 CRYSTAL 20.0 MHZ 20PF SMD RES 180K-OHM 1% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM 3.3V In-System Programmable High Density SuperFAST PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 280 MHz 3.3V in-system prommable superFAST high density PLD
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Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
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SS8PH10-E3_86A SS8PH10-E3_87A SS8PH10-M3_86A SS8PH |
High Current Density Surface Mount High-Voltage Schottky Rectifier
|
Vishay Siliconix
|
UH6PJ-E3/86A UH6PJ-E3/87A UH6PJ-M3/86A UH6PJ-M3/87 |
High Current Density Surface Mount Ultrafast High Voltage Rectifier
|
Vishay Siliconix
|
SS8PH9 SS8PH10 |
(SS8PH9 / SS8PH10) High Current Density Surface Mount High Voltage Schottky Rectifier
|
Vishay Siliconix
|
SS15P50 |
High Current Density Surface Mount
|
Bruckewell Technology LTD
|
B340A-M3-61T |
High-Current Density Surface Mount Schottky Rectifier
|
Vishay Siliconix
|
SSA33L-E3_5AT SSA33L-E3_61T SSA33LHE3_5AT SSA33LHE |
High-Current Density Surface Mount Schottky Rectifier
|
Vishay Siliconix
|