| PART |
Description |
Maker |
| EVB3020A-IFBD LUCW3020CCS-DB W3020 |
GSM Multiband RF Transceiver
|
Agere Systems
|
| SKY74117 |
RF Transceiver for Quad-Band GSM, GPRS, and EDGE Applications
|
Skyworks Solutions
|
| HD155121F |
RF Transceiver IC for GSM and PCN Dual band cellular systems
|
HITACHI[Hitachi Semiconductor]
|
| UAA3522 UAA3522HL |
Low power dual-band GSM transceiver with an image rejecting front-end
|
PHILIPS[Philips Semiconductors]
|
| MRF18085ALSR3 MRF18085AR3 MRF18085A |
GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| CX74063-26 |
RF TRANSCEIVER FOR MULTI-BAND GSM, GPRS, AND EDGE APPLICATIONS WITH POWER RAMPING CONTROLLER AND INTEGRATED CRYSTAL OSCILLATOR WITH 26 MHZ OUTPUT
|
Skyworks Solutions Inc.
|
| ADP3408 ADP3408ARU-18 ADP3408ARU-25 ADP3408ARU-1.8 |
0.3-10.0V; GSM power management system. For GSM/DCS/PCS/CDMA handsets
Replaced by BQ29415 : Voltage Protection for 2, 3, or 4 Cell LiIon Batteries (2nd Lev Protection) 8-SM8 -25 to 85
|
AD[Analog Devices]
Analog Devices, Inc.
|
| AD6432 AD6432AST |
GSM 3 V Transceiver IF Subsystem
Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Series:20110; Packaging:Cut Tape TELECOM, CELLULAR, BASEBAND CIRCUIT, PQFP44
|
Analog Devices, Inc.
|
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
| 42R51-5131RA |
MINIATURE IEC 60320 C6 APPL. INLET; FLUSH FLANGE MOUNT, PC TERMINALS
|
PowerDynamics, Inc
|
