| PART |
Description |
Maker |
| 15GN03FA |
RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single SSFP
|
ON Semiconductor
|
| IRG4RC10S IRG4RC10 IRG4RC10STR IRG4RC10STRL IRG4RC |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.10V，@和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRG4RC10SD IRG4RC10SDTR IRG4RC10SDTRL IRG4RC10SDTR |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极型晶体管，超快软恢复二极管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.10V，@和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Copack IGBT in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2SC4225 2SC4225R2 2SC4225R3 |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | SOT-323
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
|
NEC Corp.
NEC[NEC]
|
| IRG4BC10S IRG4BC10SPBF |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极晶体管IGBT的标准速度VCES和\u003d 600V电压的Vce（on）typ.1.10V @和VGE \u003d 15V的，集成电路\u003d 2.0安培
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package
|
International Rectifier, Corp.
|
| 2SC506009 |
Power transistor (90 -10V, 3A)
|
Rohm
|
| 2SC4863 2SC4863-5 2SC4863-3 |
TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 70MA I(C) | SOT-323 晶体管|晶体管|叩| 8V的五（巴西）总裁|提供70mA一（c）|SOT - 323
VHF to UHF Wide-Band Low-Noise Amp Applications
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| KO3404 |
VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) 28 m (VGS = 10V)
|
TY Semiconductor Co., Ltd
|
| NDHV310AFBE2 |
30mW; 5V; 70mA blue laser diode
|
NICHIA CORPORATION
|
| FC809 |
30V, 70mA Rectifier Silicon Barrier Diode
|
SANYO
|
