| PART |
Description |
Maker |
| HFA16PB120 |
1200V 16A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
Ultrafast, Soft Recovery Diode HEXFRED
HEXFREDTM Ultrafast, Soft Recovery Diode
Ultrafast/ Soft Recovery Diode HEXFRED
XC95216-15HQ208I - NOT RECOMMENDED for NEW DESIGN 超快，软恢复二极管HEXFRED二极
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| HFA15PB60 |
15 A, SILICON, RECTIFIER DIODE, TO-247AC
Ultrafast/ Soft Recovery Diode
HEXFREDTM Ultrafast, Soft Recovery Diode
600V 15A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
|
IRF[International Rectifier]
|
| APT30D60BHB_05 APT30D60BHB APT30D60BHBG APT30D60BH |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 30; VR (V): 600; trr (nsec): 25; VF (V): 1.6; Qrr (nC): 700; 27 A, 600 V, SILICON, RECTIFIER DIODE, TO-247AD
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| APT60D40SG APT60D40B APT60D40B_05 APT60D40BG APT60 |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 60; VR (V): 400; trr (nsec): 30; VF (V): 1.3; Qrr (nC): 540; 60 A, 400 V, SILICON, RECTIFIER DIODE
|
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| APT15D60B_05 APT15D60B APT15D60BG APT15D60B05 |
Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 15; VR (V): 600; trr (nsec): 21; VF (V): 1.6; Qrr (nC): 520; 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT15DQ60B APT15DQ60BG |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Fast Recovery Epitaxial Diode; Package: TO-247 [B]; IO (A): 15; VR (V): 600; trr (nsec): 16; VF (V): 2; Qrr (nC): 250; 15 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
|
Microsemi Corporation
Microsemi, Corp.
|
| BYV34X-600 BYV34X-600127 |
Dual ultrafast power diode
Dual rectifier diode ultrafast - I<sub>O (AV)</sub>: 20 A; t<sub>rr</sub>: 60 ns; V<sub>F</sub>: 1.16 V; V<sub>RRM</sub>: 600 V; Package: SOT186A (TO-220F); Container: Horizontal, Rail Pack
|
http://
NXP Semiconductors
|
| HFA08TA60 HFA08TA60C |
600V 8A HEXFRED Common Cathode Diode in a TO-220AB package
Ultrafast/ Soft Recovery Diode
Ultrafast, Soft Recovery Diode 超快，软恢复二极
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FFPF30UA60S |
30A, 600V, Ultrafast Diode
30 A, 600 V, Ultrafast ll Diode
|
Fairchild Semiconductor
Diodes Incorporated
|
| 1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V，最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电3V，最大反向电流降.01μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电12V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电14V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V，最大反向电.8μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V，最大反向电0μA的硅外延平面型齐纳二极管)
PC 5/10-G-7,62
PCV 5/ 4-G-7,62
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V，最大反向电0μA的硅外延平面型齐纳二极管)
From old datasheet system
Silicon Epitaxial Planar Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| BYV29X-600 BYV29X-600-15 |
Rectifier diode ultrafast
Ultrafast power diode BYV29X-600<SOD113 (SOD113)|<<http://www.nxp.com/packages/SOD113.html<1<week 32, 2004,;
|
http://
NXP Semiconductors N.V.
|
