| PART |
Description |
Maker |
| MAPRST0002 MAPRST0002-15 |
Radar Pulsed Power Transistor 50W, 1.2-1.4 GHz, 150μs Pulse, 10% Duty
Radar Pulsed Power Transistor 50W, 1.2-1.4 GHz, 150楼矛s Pulse, 10% Duty
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
|
| GRM0334C1HR50WD01D LQP03TN1N0B02 AN26025A GRM33B30 |
Ultra small, Single Band LNA-IC for 5 GHz Band Applications
|
Panasonic Battery Group
|
| UPG2162T5N-09 |
DPDT SWITCH FOR 2.4 GHz AND 6 GHz DUAL-BAND WIRELESS LAN
|
California Eastern Labs
|
| AN26031A |
Single Band LNA-IC for 2.5 GHz Band Applications
|
Panasonic Battery Group
|
| STK405-090 STK405-120 STK405-010 STK405-030 STK405 |
2ch AF Power Amplifier (Split Power Supply) 50W 50W min, THD =10%
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 1N4561D 1N4562C 1N4561C 1N2845D 1N2844D 1N2818C 1N |
Diode Zener Single 5.6V 5% 50W 3-Pin(2 Tab) TO-3
Diode Zener Single 6.2V 5% 50W 3-Pin(2 Tab) TO-3
Diode Zener Single 180V 5% 50W 3-Pin(2 Tab) TO-3
Diode Zener Single 160V 5% 50W 3-Pin(2 Tab) TO-3
Diode Zener Single 20V 5% 50W 3-Pin(2 Tab) TO-3
Diode Zener Single 25V 5% 50W 3-Pin(2 Tab) TO-3
Diode Zener Single 110V 5% 50W 3-Pin(2 Tab) TO-3
|
New Jersey Semiconductors
|
| TGA4501-EPU |
28-31 GHz Ka Band HPA 28000 MHz - 31000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
TriQuint Semiconductor,Inc.
TriQuint Semiconductor, Inc.
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| MAAMML0019 |
X -> Ka Band, Connectorised Tripler: 8 - 10 GHz -> 24 - 30 GHz
X -> Ka Band, Connectorised Tripler: 8 - 10 GHz -> 24 - 30 GHz
|
MACOM[Tyco Electronics]
|
| 2N5491 2N5493 2N5497 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W.
Silicon N-P-N VERSAWATT transistor. 75V, 50W.
Silicon N-P-N VERSAWATT transistor. 90V, 50W.
|
General Electric Solid State
|
| MB54608B MB54608L MB54608LPFV MB54608LPV1 |
1.0 GHz band Low Power I/Q Modulator For Direct Conversion 800 MHz - 1000 MHz RF/MICROWAVE I/Q MODULATOR
1.0 GHz band Low Power I/Q Modulator For Direct Conversion 1.0 GHz频段的低功率的I / Q调制器的直接转换
|
Fujitsu Microelectronics
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu, Ltd.
|
