| PART |
Description |
Maker |
| K4H561638A-TCA0 K4H561638A-TCA2 K4H561638A-TCB0 K4 |
128Mb F-die DDR SDRAM Specification
256Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
128MB DDR SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYS64D16000GU-7-A HYS64D16000GU-8-A HYS72D32020GU- |
DDR SDRAM Modules - 128MB (16Mx72) PC2100 1-bank
Unbuffered DDR SDRAM-Modules
|
INFINEON[Infineon Technologies AG]
|
| HYS64D16020GD HYS64D16020GDL-7-A HYS64D16020GDL-8- |
DDR SDRAM Modules - 128MB (16Mx64) PC2100 2-bank
Unbuffered DDR SDRAM SO Modules
|
Infineon Technologies AG
|
| HY5DU28822BT-X HY5DU28822BT HY5DU28822BLT-X HY5DU2 |
DDR SDRAM - 128Mb
128M-S DDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HY5DU28422DT-X HYNIXSEMICONDUCTORINC.-HY5DU28822DT |
128Mb-S DDR SDRAM
|
Hynix Semiconductor Inc.
|
| HY5DU281622DT-J HY5DU2842DT-J HY5DU2842DT-L HY5DU2 |
DDR SDRAM - 128Mb
|
Hynix Semiconductor
|
| V58C2128164S V58C2128804SXT8 V58C2128404SXT8 V58C2 |
HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM
High performance 2.5V 128MB DDR SDRAM
|
Mosel Vitelic Corp
|
| EBD12UB8ALF-75 EBD12UB8ALF-7A EBD12UB8ALF-1A |
128MB Unbuffered DDR SDRAM DIMM
|
Elpida Memory
|
| WED3EG6418S335D4 WED3EG6418S202D4 WED3EG6418S262D4 |
128MB- 16Mx64 DDR SDRAM UNBUFFERED W/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HYMD216646AL6-K HYMD216646AL6-H HYMD216646A6-H HYM |
Unbuffered DDR SDRAM DIMM
16Mx64|2.5V|M/K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
