| PART |
Description |
Maker |
| HYMD116725BL8-H HYMD116725BL8-K HYMD116725BL8-L HY |
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
16Mx72|2.5V|M/K/H/L|x9|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
http://
|
| HYM72V16M736BFU6-H |
SDRAM - SO DIMM 128MB
|
Hynix Semiconductor
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYM76V16C735HGT4-H HYM76V16C735HGT4-K |
SDRAM - Registered DIMM 128MB
|
Hynix Semiconductor
|
| HYM71V16C755HCT8 HYM71V16C755HCT8-8 HYM71V16C755HC |
SDRAM - Registered DIMM 128MB
|
Hynix Semiconductor
|
| HYS64V1622 HYS64V8200GDL-8 HYS64V16220GDL HYS64V16 |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块
Aluminum Electrolytic Radial Lead Hi Temp Capacitor; Capacitance: 100uF; Voltage: 35V; Case Size: 10x12.5 mm; Packaging: Bulk
128MB PC133 (3-3-3) 2-bank End-of-Life
SDRAM Modules - 128MB PC133 (3-3-3) 2-bank End-of-Life
|
INFINEON[Infineon Technologies AG]
|
| EBD12UB8ALF-75 EBD12UB8ALF-7A EBD12UB8ALF-1A |
128MB Unbuffered DDR SDRAM DIMM
|
Elpida Memory
|
| HYMD116645AL8 HYMD116645A8 |
16Mx64|2.5V|K/H/L|x8|DDR SDRAM - Unbuffered DIMM 128MB
|
|
| HYMD216646AL6-K HYMD216646AL6-H HYMD216646A6-H HYM |
Unbuffered DDR SDRAM DIMM
16Mx64|2.5V|M/K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| GMM27316230ETG GMM27316233ENTG-7K |
x72 SDRAM Module x72内存模块
16Mx72|3.3V|75/7K|x18|SDR SDRAM - Registered DIMM 128MB 16Mx72 | 3.3 | 75/7K | x18 | SDRAM的特别提款权-注册128MB的内
|
ITT, Corp.
Mini-Circuits
|
