| PART |
Description |
Maker |
| MCR01MZPJ5R6 MCR01MZPJ823 MCR01MZPJ620 NESG3033M14 |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| NESG2021M05-A NESG2021M05-T1 NESG2021M05-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
Renesas Electronics Corporation
|
| NESG210719 NESG210719-T1 |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC[NEC]
|
| MSG43001 |
SiGe HBT type For low-noise RF amplifier
|
Panasonic Semiconductor
|
| MSG33002 |
SIGE HBT TYPE FOR LOW-NOISE RF AMPLIFIER
|
http://
|
| NESG210719-T1-A NESG210719-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
California Eastern Labs
|
| NESG3031M05-T1-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
|
California Eastern Labs
|
| NESG2031M05-T1-A NESG2031M05-A |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
Renesas Electronics Corporation
|
| HMC476SC70 HMC476SC70E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 6 GHz
|
Hittite Microwave Corporation
|
| HMC481ST89 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER/ DC - 5.0 GHz
|
Hittite Microwave Corporation
|
| HMC479MP86 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5.0 GHz
|
HITTITE[Hittite Microwave Corporation]
|
