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EDI2CG27264V85D1 - 2x64Kx72, 3.3V,8.5ns, Sync/Sync Burst SRAM Module(2x64Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块) 2x64Kx72.3伏,8.5ns,同同步突发静态存储器模块x64Kx72.3伏,8.5ns,同同步脉冲静态内存模块)

EDI2CG27264V85D1_5564940.PDF Datasheet


 Full text search : 2x64Kx72, 3.3V,8.5ns, Sync/Sync Burst SRAM Module(2x64Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块) 2x64Kx72.3伏,8.5ns,同同步突发静态存储器模块x64Kx72.3伏,8.5ns,同同步脉冲静态内存模块)
 Product Description search : 2x64Kx72, 3.3V,8.5ns, Sync/Sync Burst SRAM Module(2x64Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块) 2x64Kx72.3伏,8.5ns,同同步突发静态存储器模块x64Kx72.3伏,8.5ns,同同步脉冲静态内存模块)


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EDI2CG472128V10D2 EDI2CG472128V85D2 EDI2CG472128V- 4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块) 4x128Kx723.3同步/同步突发静态存储器x128Kx723.3伏,10纳秒,同同步脉冲静态内存模块)
4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块) 4x128Kx72.3同步/同步突发静态存储器x128Kx72.3伏,8.5ns,同同步脉冲静态内存模块)
4x128Kx72, 3.3V Sync/Sync Burst SRAM(4x128Kx72, 3.3V锛?.5ns,???/?????????RAM妯″?)
SSRAM Modules
Bourns, Inc.
Electronic Theatre Controls, Inc.
GS8324Z18B-225I GS8324Z18B-250I GS8324Z18B-133I GS 225MHz 6.5ns 2M x 18 36Mb sync NBT SRAM
250MHz 6ns 2M x 18 36Mb sync NBT SRAM
133MHz 11ns 2M x 18 36Mb sync NBT SRAM
166MHz 8.5ns 2M x 18 36Mb sync NBT SRAM
150MHz 10ns 2M x 18 36Mb sync NBT SRAM
200MHz 7.5ns 2M x 18 36Mb sync NBT SRAM
166MHz 7ns 2M x 18 36Mb sync NBT SRAM
133MHz 11ns 1M x 36 36Mb sync NBT SRAM
150MHz 10ns 1M x 36 36Mb sync NBT SRAM
166MHz 8.5ns 1M x 36 36Mb sync NBT SRAM
200MHz 7.5ns 1M x 36 36Mb sync NBT SRAM
225MHz 6.5ns 1M x 36 36Mb sync NBT SRAM
250MHz 6ns 1M x 36 36Mb sync NBT SRAM
GSI Technology
EDI2AG272129V9D1 EDI2AG272129V10D1 EDI2AG272129V12 2x128Kx72, 3.3V,9ns, Sync/Sync Burst SRAM Module(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块)
2x128Kx72, 3.3V,10ns, Sync/Sync Burst SRAM Module(2x128Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块)
2x128Kx72, 3.3V,12ns, Sync/Sync Burst SRAM Module(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块)
2x128Kx72,, 3.3V,8.5ns, Sync/Sync Burst SRAM Module(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块)
White Electronic Designs Corporation
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
AMIC Technology
EDI2CG472256V EDI2CG472256V10D2 EDI2CG472256V12D2 8 Megabyte Sync/Sync Burst, Dual Key DIMM
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SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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CD54HC162F3A CD54HC162H/3 HC/UH SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP DECADE COUNTER, CDIP16
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