| PART |
Description |
Maker |
| FGW35N60HD |
Discrete IGBT (High-Speed V series) 600V / 35A
|
Fuji Electric
|
| FGW40N120H |
Discrete IGBT (High-Speed V series) 1200V / 40A
|
Fuji Electric
|
| FGW30N120HD |
Discrete IGBT (High-Speed V series) 1200V / 30A
|
Fuji Electric
|
| FGW30N120H |
Discrete IGBT (High-Speed V series) 1200V / 30A
|
Fuji Electric
|
| FGW75N60HD |
Discrete IGBT (High-Speed V series) 600V / 75A
|
Fuji Electric
|
| SGL160N60UFD SGL160N60UFDTU |
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 160 A, 600 V, N-CHANNEL IGBT, TO-264AA
Ultrafast IGBT
Discrete, High Performance IGBT with Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4PC60F-P |
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package
INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
|
IRF[International Rectifier]
|
| SGF23N60UF SGF23N60UFTU |
Discrete, High Performance IGBT
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| 2SJ226 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0503-0 00; No. of Positions: 8; Connector Type: Wire
Very High-Speed Switching Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
| 2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd.
Hitachi Semiconductor
|
