| PART |
Description |
Maker |
| AMS8205A |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| LS26500 |
3.6 V Primary lithium-thionyl chloride High energy density C-size bobbin cell
|
saftbatteries
|
| LS14500 |
3.6 V Primary lithium-thionyl chloride High energy density AA-size bobbin cell
|
saftbatteries
|
| WPM3012 WPM3012-3 WPM3012-3TR |
Single P-Channel, -30V, -3.1A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
| WPM3005 WPM3005-3TR |
Single P-Channel, -30V, -4.1A, Power MOSFET Supper high density cell design
|
TY Semiconductor Co., Ltd
|
| LS17500 |
3.6V Primary lithium-thionyl chloride (Li-SOCl2)High energy density A-size bobbin cell
|
SAFT
|
| ACE632 |
The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
ACE Technology Co., LTD.
|
| STP9434 |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4416 |
STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4526 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4435A |
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
