| PART |
Description |
Maker |
| KRF7343 |
HEXFET Power MOSFET
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| STY80NM60N |
N-channel 600 V - 0.035 Ω - 80 A - Max247 second generation MDmesh Power MOSFET
N-channel 600 V - 0.035 ヘ - 80 A - Max247 second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| DMN4009LK3 |
New Generation MOSFET
|
Diodes
|
| DMN2027LK3 |
New Generation MOSFET
|
Diodes
|
| DMC3028LSD |
New Generation MOSFET
|
Diodes
|
| BFC12 |
4TH GENERATION MOSFET
|
Seme LAB
|
| SUN12A65F |
New Generation N-Ch Power MOSFET
|
KODENSHI KOREA CORP.
|
| STP19NM65N STW19NM65N STF19NM65N STI19NM65N STB19N |
N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh Power MOSFET
N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh?/a> Power MOSFET
N-channel 650 V - 0.25 ヘ - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET
technology, Ultra Low On-Resistance, P-Channel MOSFET
generation v technology
|
International Rectifier
|
