| PART |
Description |
Maker |
| RJK60S5DPQ-E0 RJK60S5DPQ-E0-T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL60S5DPP-E0 RJL60S5DPP-E0T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| APT5027 APT5027BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
POWER MOS V 500V 20A 0.270 Ohm
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| STW20NM60 |
N-CHANNEL Power MOSFET
N-CHANNEL 600V - 0.26ohm - 20A TO-247 MDmesh?Power MOSFET
N-CHANNEL 600V - 0.26ohm - 20A TO-247 MDmesh⑩Power MOSFET
N-CHANNEL 600V - 0.26 OHM - 20A TO-247 MDMESH POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| APT6015JVR |
POWER MOS V 600V 35A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6015LVR |
POWER MOS V 600V 38A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技
IGBTs & DuoPacks - 20A 600V TO220 IGBT
IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
| APT6025BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 600V 25A 0.250 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT60M75L2LL |
POWER MOS 7 600V 73A 0.075 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
