Part Number Hot Search : 
41001 ISL28 402DS BD5006 0M505X7F I1522RW MPC8260E 43020
Product Description
Full Text Search

PF2007DF8 - Silicon Planar Type Diode

PF2007DF8_5428632.PDF Datasheet


 Full text search : Silicon Planar Type Diode
 Product Description search : Silicon Planar Type Diode


 Related Part Number
PART Description Maker
1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V,最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电3V,最大反向电流降.01μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电12V的,最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V,最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压(典型齐纳电14V的,最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V,最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V,最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V,最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V,最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V,最大反向电.8μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V,最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V,最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V,最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V,最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V,最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V,最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V,最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V,最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V,最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V,最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V,最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V,最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V,最大反向电0μA的硅外延平面型齐纳二极管)
PC 5/10-G-7,62
PCV 5/ 4-G-7,62
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V,最大反向电0μA的硅外延平面型齐纳二极管)
From old datasheet system
Silicon Epitaxial Planar Z?Diodes
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
1N962 1N963 1N967 1N978 1N957 1N958 1N959 1N960 1N 30 V, 4.2 mA, silicon planar zener diode
7.5 V, 16.5 mA, silicon planar zener diode
SILICON PLANAR ZENER DIODES
14PX2R TH STRAIGHT
CONN, 3PX1R TH STRAIGHT
CONN. 2 POSITIONS ALIGNED 2.54MM
1X30FT SELF-FUSING TAPE
DIP Socket; No. of Contacts:28; Pitch Spacing:0.1"; Row Spacing:0.6"; Terminal Type:Solder Tail; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 硅平面稳压二极管
CONN HDR 8POS RT ANG POST 硅平面稳压二极管
DIP Socket; No. of Contacts:28; Pitch Spacing:0.1"; Row Spacing:0.6"; Terminal Type:Wire Wrap; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes
10 V, 12.5 mA, silicon planar zener diode
39 V, 3.2 mA, silicon planar zener diode
6.8 V, 18.5 mA, silicon planar zener diode
http://
SEMTECH[Semtech Corporation]
Semtech, Corp.
Honey Technology
GZB2.0TO36 1360 GZB24 GZB30 Silicon Planar Type 1.0mW Zener Diode(??????涓罕.0mW???骞抽????绾充????)
1.0W Zener Diode
From old datasheet system
Silicon Planar Type 1.0mW Zener Diode(功率损耗为1.0mW的硅平面型齐纳二极管)
Sanyo Electric Co.,Ltd.
MA2S376 Silicon epitaxial planar type UHF BAND, 15 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
MA2S367 Silicon epitaxial planar type VHF-UHF BAND, 13.25 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
PANASONIC[Panasonic Semiconductor]
MA2C179 MA178 MA179 MA2C178 Silicon epitaxial planar type 0.2 A, 80 V, SILICON, SIGNAL DIODE, DO-34
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
MA3XD17 Silicon epitaxial planar type 0.3 A, SILICON, SIGNAL DIODE
Panasonic, Corp.
Panasonic Semiconductor
1S2093 SILICON PLANAR TYPE TRIGGER DIODE
TOSHIBA[Toshiba Semiconductor]
1N4608 SILICON EPITAXIAL PLANAR TYPE DIODE
TOSHIBA[Toshiba Semiconductor]
1S2095A SILICON EPITAXIAL PLANAR TYPE DIODE
TOSHIBA[Toshiba Semiconductor]
KTX411TY KTX411T KTX411TGR EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
KEC[KEC(Korea Electronics)]
 
 Related keyword From Full Text Search System
PF2007DF8 rohm PF2007DF8 diode PF2007DF8 configuration PF2007DF8 silicon PF2007DF8 poliester
PF2007DF8 Ic-on-line PF2007DF8 molex PF2007DF8 international PF2007DF8 Battery MCU PF2007DF8 Instrument
 

 

Price & Availability of PF2007DF8

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.57335305213928