| PART |
Description |
Maker |
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG600Q1US61 |
TOSHIBA IGBT Module Silicon N Channel IGBT
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
| MIG50J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MIG150J7CSB1W |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| MIG20J906E MIG20J906EA |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| MBN400C33A |
IGBT Module / Silicon N Channel IGBT
Silicon N-channel IGBT
|
HITACHI[Hitachi Semiconductor]
|
| MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| MIG50Q7CSA0X |
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT
|
Toshiba Semiconductor
|
| MIG75J201H |
TOSHIBA Intelligent Power Module Silicon N Channel IGBT 东芝智能功率模块IGBT的硅频道
|
Toshiba, Corp.
Toshiba Semiconductor
|
| GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
