| PART |
Description |
Maker |
| HMD4M32M8AG HMD4M32M8EG HMD4M32M8EAG-6 HMD4M32M8EG |
16Mbyte(4Mx32) 72-pin EDO MODE, 2K/4K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd.
|
| HMD8M36M24EG HMD8M36M24EG-5 HMD8M36M24EG-6 |
32Mbyte(8Mx36) 72-pin EDO with Parity MODE 2K Ref. SIMM Design 5V
|
Hanbit Electronics Co.,Ltd
|
| HMD1M36M3EG HMD1M36M3EG-6 HMD1M36M3EG-5 |
4Mbyte(1Mx36) 72-pin SIMM EDO with Parity MODE, 1K Ref. 5V 4MbyteMx362引脚平价模式，每1000参考上海药物研究所易都5V
|
Hanbit Electronics Co., Ltd.
|
| HMD4M36M3EG |
16Mbyte(4Mx36) 72-pin SIMM EDO with Parity MODE, 4K Ref. 5V 16MbyteMx362引脚平价模式，上海药物研究所易都4K的参考5V
|
Hanbit Electronics Co., Ltd.
|
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| HCPMEM-512 |
EDO DRAM Board 512Mbyte ( 32M x 144-Bit ) organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC EDO公司的DRAM局512Mbyte2M的144位）筹办8Mx144K的参Banks。，3.3伏，环境保护运动委员
|
Hanbit Electronics Co.,Ltd.
|
| IBM0117805MT3-70 IBM0117805T3-6R IBM0117805BT3-70 |
x8 EDO Page Mode DRAM
2M*8 11/10 EDO DRAM 20081/ 10动态随机存取存储器
|
IBM Microeletronics
International Business Machines, Corp.
|
| IS41LV8512 IS41C8512 41C8512 IS41C8512-35K IS41C85 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
From old datasheet system
DYNAMIC RAM, EDO DRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IBM11N4645CB-60J IBM11N4735CB-50J |
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
Unisonic Technologies Co., Ltd.
Electronic Theatre Controls, Inc.
|
