| PART |
Description |
Maker |
| NCV7001DWR2G NCV7001_05 NCV7001 NCV7001DW NCV7001D |
Quad Variable Reluctance Sensor Interface IC
|
ONSEMI[ON Semiconductor]
|
| CS1124/D |
Dual Variable-Reluctance Sensor Interface IC 双可变磁阻传感器接口IC
|
ON Semiconductor
|
| MAX992409 |
Variable Reluctance Sensor Interfaces with Differential Input and Adaptive Peak Threshold
|
Maxim Integrated Products
Maxim Integrated Produc...
|
| CY7C0240411 CY7C025-55JXC CY7C025-55JXI CY7C025 CY |
4K x 18 Dual-PortStatic RAM with Sem, Int, Busy(带Sem, Int, Busy输入端的K x 18 双端口静RAM) 4K的18双PortStatic RAM的扫描电镜，廉政，忙（带扫描电镜，廉政，忙输入端的的4K的18双端口静态RAM）的
8K x 18 Dual-Port Static RAM with Sem, Int, Busy(带Sem, Int, Busy输入端的K x 18 双端口静RAM)
4K x 16 Dual-Port Static RAM with Sem, Int, Busy(带Sem, Int, Busy输入端的K x 16 双端口静RAM)
8K x 16 Dual-PortStatic RAM with Sem, Int, Busy(带Sem, Int, Busy输入端的K x 16 双端口静RAM)
4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY
|
Cypress Semiconductor Corp.
|
| 160MT100KB 160MT120K 160MT120KB 160MT160KB 130MT80 |
THREE PHASE BRIDGE 三相桥式
800V 3 Phase Bridge in a INT-A-Pak package
1400V 3 Phase Bridge in a INT-A-Pak package
1000V 3 Phase Bridge in a INT-A-Pak package
1200V 3 Phase Bridge in a INT-A-Pak package
1600V 3 Phase Bridge in a INT-A-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| GA250TD120U |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT
HALF-BRIDGE IGBT DOUBLE INT-A-PAK
|
IRF[International Rectifier]
|
| VSKD166-08PBF VSKD166-12PBF VSKD166-14PBF VSKD166- |
Standard Recovery Diodes, 165 A to 230 A (INT-A-PAK Power Modules)
195 A, 800 V, SILICON, RECTIFIER DIODE ROHS COMPLIANT, INT-A-PAK-3
165 A, 800 V, SILICON, RECTIFIER DIODE ROHS COMPLIANT, INT-A-PAK-3
|
Vishay Siliconix
Vishay Beyschlag
|
| CCD181DC CCD181 |
Variable-Element High-Speed Linear Image Sensor
|
Seme LAB
|
| 142-06J08SL 144-06J12L 143-16J12SL 142-06J08L 143- |
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.22 uH - 0.248 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.193 uH - 0.306 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.638 uH - 0.801 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.275 uH - 0.355 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.315 uH - 0.423 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.115 uH - 0.121 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.382 uH - 0.422 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, RoHS UNSHIELDED, 0.391 uH - 0.493 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.355 uH - 0.477 uH, VARIABLE INDUCTOR
RF inductor, tunable, Carbonyl J core, shielded, RoHS SHIELDED, 0.693 uH - 0.846 uH, VARIABLE INDUCTOR
|
Coilcraft, Inc.
COILCRAFT INC
|
| MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14
250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 836EN-0202Z 836EN-0208Z 836EN-0204Z 836EN-0205Z 83 |
Variable Coils for Surface Mounting UNSHIELDED, VARIABLE INDUCTOR, SMD
|
TOKO Inc.
TOKO, Inc.
|
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