| PART |
Description |
Maker |
| IDH20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH09G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH08G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDT12S60C-08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies A...
|
| IDT04S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| IDC05S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
| IDB06S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
| IDT10S60C08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| IDD04S60C |
2nd Generation thinQ SiC Schottky Diode 2nd Generation thinQ! SiC Schottky Diode
|
INFINEON[Infineon Technologies AG]
|