| PART |
Description |
Maker |
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| X2114TTT X2111TTT X2112PTT X2118PFD X2118PET X2111 |
Analog IC
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR3709Z with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7403 with Lead Free Packaging
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ44EPBF with Standard Packaging
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU3518 with Lead Free Packaging
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; A IRFP1405 with Standard Packaging 模拟IC
|
NXP Semiconductors N.V.
|
| IRHLF740Z4 IRHLF770Z4 IRHLF780Z4 IRHLF730Z4 IRHLF6 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) 抗辐射逻辑电平功率MOSFET通孔（到39
From old datasheet system
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| NTR2101P NTR2101PT1 |
Small Signal MOSFET 8.0V, 3.7A, Single P Channel, SOT23(8.0V, 3.7A双功率MOSFET) 小信号MOSFET 8.0V.7A，单P通道，SOT23封装8.0V.7A双功率MOSFET的）
Small Signal MOSFET -8 V, -3.7 A, Single P-Channel, SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 3700 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
ON Semiconductor
|
| X24C04V-1.8 X24C04PI-1.8 X24C04V-2.7 X24C04MI-1.8 |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRF3709ZCS with Standard Packaging
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRL3713L with Standard Packaging
I2C Serial EEPROM
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ46NS with Tape and Reel Right Packaging
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR3303 with Standard Packaging I2C串行EEPROM
|
Electronic Theatre Controls, Inc.
|
| STB55NE06 5405 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET（不适用沟道增强模式功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| IRFZ44VZ IRFZ44VZL IRFZ44VZS IRFZ44VZPBF |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 60V的，的Rds（on）\u003d 12mohm，身份证\u003d 57A条）
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
